Method of manufacturing self-supporting contacting structures

ABSTRACT

A self-supporting contacting structure is directly produced on a component that does not have a housing by applying a layer made of non conducting material and a layer made of an electrically conductive material to the component and to a support and by subsequently removing these layers from said support.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is the U.S. National Stage of International ApplicationNo. PCT/EP2004/000263, filed Jan. 15, 2004 and claims the benefitthereof. The International Application claims the benefits of Germanapplication No. 10308928.4, filed Feb. 28, 2003. The InternationalApplication and the German application are incorporated by referenceherein in their entirety.

FIELD OF INVENTION

The invention relates to self-supporting contacting structures that aredirectly produced on components without housing.

BACKGROUND OF THE INVENTION

To get from contact pads of electronic components without housings tolarger solderable contact elements, the use of a lead frame is known.The component to be contacted is in this case placed an a mostlymetallic punched contacting support, known as the lead frame, and thecontact pads of the components are electrically-connected through wirebonding with the individual leads of the contacting support.

A further method for contacting components without housings is to usewhat is known as the Tape Automated Bonding (TAB) technique. In thiscase flexible structures with narrow solderable internal contacts andwide solderable external contacts are produced, such structures beingknown as spiders. The contact pads of the component to be contacted areconnected to the internal contacts. The external contacts are used forcontacting with the circuit carrier.

SUMMARY OF THE INVENTION

Using these approaches as its starting point, an object of the presentinvention consists of specifying an alternative and low-cost option forcontacting components without housings, which is especially alsosuitable for power components.

This object is achieved by the inventions specified in the claims.

The idea behind the invention is to create a self-supporting, planar,conductor and/or isolator structure initially on a support and then todetach it from this support.

Accordingly, in a method for fabricating a component with a contactingstructure, a layer of electrically-isolating material is applied to thecomponent and to a support arranged on and/or at the component. In thiscase the support in particular does not have to be covered over itswhole surface by the layer of electrically-isolating material. Anelectrical contact surface of the component remains free when the layerof electrically-isolating material is applied and/or is revealed afterthe application of the layer of electrically-isolating material. Then,in a further step, a layer of electrically-conductive material isapplied to the layer of electrically-isolating material and to theelectrical contact surface of the component. Finally the layer ofelectrically-isolating material is detached from the support.

Naturally it lies within the framework of the invention to use thisprocedure in a similar manner for a number of components with contactsurfaces, for modules with a number of components and/or for componentswith a number of contact surfaces.

The layer of electrically-conductive material can additionally also beapplied to the area of the support which is not covered by-the layer ofelectrically-isolating material. Then finally, as well as the layer ofelectrically-isolating material, the layer of electrically-conductivematerial is also detached from the support.

As an alternative or in addition, a layer of electrically-isolatingmaterial is applied to the component in a method for fabricating acomponent with a contacting structure An electrical contact surface ofthe component remains free when the layer of electrically-isolatingmaterial is applied and/or is revealed after the application of thelayer of electrically-isolating material. In a further step a layer ofelectrically-conductive material is applied to the layer ofelectrically-isolating material, the electrical contact surface of thecomponent and to a support arranged on and/or at the component. In thiscase the support in particular does not have to be covered over itswhole surface by the layer of electrically-conductive material. Finallythe layer of electrically-isolating material is detached from thesupport.

The layer of isolating material and the layer of electrically-conductivematerial form a planar, self-supporting contacting structure in the formof a conductor/Isolator structure on the component.

For passivation to protect against environmental influences thecomponent and the layer can thereafter be enclosed at least partly in ahousing and/or covered by a cover. To this end for example thecomponent, the layer of electrically-isolating material and/or the layerof electrically-conductive material are in particular encapsulated witheach other. This can be done for example in the form of a droppassivation (Globtop) or a frame encapsulant (Silgel). Instead ofGlobtop or Overmold however, laminating on a further foil is alsoconceivable. As an alternative or in addition to a plastic covering inthe form of a plastic foil or a Globtop a Nickel/Gold protective layercan also be used.

Preferably the support exhibits at least in part a low surface adhesion.In particular it is Teflon-coated and/or made of Teflon.

The support can also feature a holder for the component and/or anejector for detaching the layer of electrically-conducting and/or thelayer of electrically-isolating material.

Revealing the contact surface of the component preferably opens a windowin the layer of electrically-isolating material with more than 60% ofthe size of the side and/or surface of the component, at which thewindow is opened, especially more than 80% This means that the method isespecially suitable for power components, for which on contacting with aflat conductor a contact window and a contact surface of the appropriatesize is provided. The window is especially opened on the largest and/orthe side of the component facing away from the support and preferablyhas an absolute size of more as 50 mm², especially more than 70 mm² oreven more than 100 mm².

As an alternative or in addition to revealing the contact surface of thecomponent, the layer of electrically-isolating material can also beapplied so that the contact surface of the component remains at leastpartly free, in that a window is opened with more than 60% of the sizeof the side and/or surface of the component, at which the window isopened, especially more than 80%.

To ensure clean coverage of the edges of the component, the size of thewindow should on the other hand not amount to more than 99.9% of thesize of the side and/or surface of the component on which the window isopened, especially not more than 99% and further preferably not morethan 95%.

The fact that the component is arranged on and/or at the support meansthat support and component form a surface contour. The layer ofelectrically-isolating material is especially applied to the support andthe component such that the layer of electrically-isolating materialfollows the surface contour formed by support and component, i.e. thatthe layer of electrically-isolating material corresponding to thesurface contour formed from support and component runs over the surfacecontour. If on the other hand logic chips are embedded in a polymer, asin the prior art, only the underside of the polymer layer follows thesurface contour, but not the polymer layer itself.

The fact that the layer of electrically-isolating material follows thesurface contour formed from support and component produces twoadvantages, especially if a power component is used as a component. Onthe one hand a still sufficient thickness of the layer ofelectrically-isolating material over the edges of the component facingaway from the support is guaranteed so that a flashover at high voltageor field strengths is prevented. On the other hand the layer ofelectrically-isolating material alongside the as a rule very high powercomponent is not so thick that a any later revealing and contacting ofcontact surfaces on conductor tracks of a substrate, on which thecomponent is later to be arranged, would be problematic.

The thickness of the layer of electrically-isolating material over thesupport varies in an area running in a straight line by less than 50% ofits thickness over the component and the linear area surrounding it,especially by less than 20%. Preferably the thicknesses are about thesame, that is they vary by less than 5% or even less than 1% from oneanother. The percentage figures relate especially to the thickness ofthe layer over the component and the linear area surrounding it, whichaccordingly specifies the 100%. The area running linearly is taken intoconsideration since the layer is as a rule thicker in the inner edges ofsupport and component and thinner over the edges of the component facingaway from the support.

The layer of electrically-isolating material is especially made ofplastic. Depending on further processing it can be photosensitive ornon-photosensitive.

It is preferably applied using one or more of the following procedures:Curtain coating, dipping, especially single-side dipping, dischargecoating, especially electrostatic discharge coating, printing,especially screen printing, overmolding, dispensing, spin coating,application of a laminate foil.

From time to time it is advantageous if the layer ofelectrically-isolating material is not a foil. If on the other hand afoil is used as the layer of electrically-isolating material, thelamination is advantageously undertaken in a vacuum press, Conceivablemethods are vacuum swaging, hydraulic vacuum pressing, vacuum gaspressure pressing or similar lamination procedures. The pressure isadvantageously applied isostatically. The lamination is undertaken forexample at temperatures of 100° C. to 250° C. and a pressure of 1 bar to10 bar. The precise process parameters of the application of thelamination, that is pressure, temperature, time etc., depend amongstother things on the topology of the component and of the support, of theplastic material of the foil and the thickness of the foil.

The foil can consist of any type of thermoplasts, duroplasts andmixtures thereof A foil made of a plastic material based on Polyimide(PI), Polyethylene (PE), Polyphenole, Polyether-Etherketone (PEEK)and/or epoxy are used in the inventive method. The foil can in this casefeature an adhesive coating on the surface to improve adhesion. Likewisethe substrate surface can be coated with an adhesion promoter,preferably Silane compounds.

After the application of the lamination a tempering stage is especiallyperformed. The temperature treatment and moistening improve theadhesion, thermal, physical and mechanical properties of the foil on thesurface.

To apply the layer of electrically-conducting material, that his forplanar contacting, a physical chemical separation o felectrically-conducting material is advantageously undertaken. Thesetypes of physical procedure are sputtering and Physical VaporDeposition, (PVD). The chemical separation can be undertaken in agaseous phase (Chemical Vapor Deposition, CVD) and/or liquid phase:(Liquid Phase: Chemical Vapor Deposition). It is also conceivable thatinitially one of these procedures is used to apply a thinelectrically-conductive sublayer, of titanium/copper for example ontowhich a thicker electrically-conductive sublayer of for example coppercan be electrically deposited.

The layer of electrically-isolating material is in this case designed sothat a height difference of up to 1000 μm can be overcome. The heightdifference is caused amongst other things by the topology of the supportand of the semiconductor chip arranged on and/or at the support.

The thickness of the layer of electrically-isolating material can amountto between 10 μm and 500 μm. Preferably in the inventive method a layerof electrically-isolating material with a thickness of 25 to 150 μm isapplied.

In a further embodiment the application is repeated as often as isrequired to achieve a specific thickness of the layer ofelectrically-isolating material. For example sublayers ofelectrically-isolating material of lesser thickness are processed toform one layer of electrically-isolating material of greater thickness.These sublayers of electrically-isolating material advantageouslyconsist of a type of plastic material. It is also conceivable in thiscase that the sublayers of electrically-isolating material consist of anumber of different plastic materials. The result is the layer ofelectrically-isolating material constructed from the sublayers.

The electrical contact surface of the component can be left free onapplication of the layer of electrically-isolating material and/or canbe revealed later. The complete or partial revealing as the layer isbeing applied can be implemented especially advantageously if the layerof electrically-isolating material is applied in the form of a foil.This then namely allows a foil with one or more corresponding openingsor windows to be used right from the start which can be created forexample beforehand using a low-cost punching or cutting-out methods.

In a particular embodiment a window is opened in the layer ofelectrically-isolating material by laser ablation for revealing of theelectrical contact surfaces. A wavelength of a laser used for thispurpose amounts to between 0.1 μm and 11 μm. The power of the laseramounts to between 1 W and 100 W. Preferably a CO2 laser with awavelength of 9,24 μm is used. The window is opened in this case withoutdamaging any aluminum, gold or copper chip contacts which might liebelow the layer of electrically-isolating material.

In a further embodiment a photo-sensitive layer ofelectrically-isolating material is used and a window is opened using aphoto-lithographic process to reveal the electrical contact surface. Thephoto-lithographic process comprises exposing the photo-sensitive layerof electrically-isolating material and developing and thereby removingthe exposed or non-exposed areas of the layer of electrically-isolatingmaterial.

After the window is opened there may be a cleaning step in which theremains of the layer of electrically-isolating material are removed. Thecleaning step is undertaken for example using wet chemistry. A plasmacleaning method is especially conceivable.

In a further embodiment a layer comprising a number of sublayers ofdifferent electrically-conducting materials arranged above one anotheris used. For example different metal layers are applied above oneanother. The number of the sublayers or metal layers especially amountsto between 2 and 5. A sublayer functioning for example as a diffusionbarrier can be integrated by the layer constructed from a number ofsublayers. Such a sublayer consists for example of a titanium-tungstenalloy (TiW). Advantageously, with a multi-layer construction, a sublayerwhich promotes adhesion or improves it is applied directly to thesurface to be contacted. Such a sublayer consists of titanium forexample.

In a particular embodiment, after the planar contacting at least oneconductor track is created in and/or on the layer of theelectrically-conducting material. The conductor track can be applied tothe layer. In particular a structuring of the layer is per formed tocreate the conductor track. This means that the conductor track iscreated in this layer. The conductor track is used for example for theelectrical contacting of a semiconductor chip.

The track is usually structured in a photo-lithographic process. To thisend a photo resist can be applied to the electrically-conducting layer,dried and subsequently exposed and developed. Under some circumstances atempering step follows in order to stabilize the photo resist which hasbeen applied against subsequent treatment processes. Conventionalpositive and negative resists (coating materials) may be used as photoresists. The photo resist is for example applied using a deposition ordipping process. Electro-deposition (electrostatic or electrophoreticdeposition) is also conceivable.

Instead of a photo resist, another material able to be structured can beapplied with one or more of the following procedures: Curtain coating,dipping, especially single-side dipping, discharge coating, especiallyelectrostatic discharge coating, printing, especially screen printing,overmolding, dispensing, spin coating, application of a laminate foil.

Photo-sensitive foils can also be used for structuring, said foils beingapplied as a laminate and exposed and developed in a comparable way tothe applied photo resist layer.

To create the conductor track the process employed can be as follows forexample: In a first part step the electrically-conducting layer isstructured and in a subsequent part step a further metallization isapplied to the conductor track created. The conductor track isstrengthened through the further metallization. For example copper iselectrically-deposited to a thickness of 1 μm to 400 μm on the conductortrack created by the structuring. Thereafter the photo resist layer orthe laminated-on foil or the alternatively used structurable material isremoved. This is undertaken for example with an organic solvent, analkaline developer or suchlike. Through subsequent differential etchingthe surface metallic conducting layer not strengthened by themetallization is removed again. The strengthened conductor track isretained.

In a particular embodiment, for manufacturing a multi-layer device, thesteps of lamination application, revealing, contacting and creating theconductor track are performed a number of times.

The invention advantageously provides an innovative technology forelectrical contacting and wiring of connection pads or contact surfaceswhich are arranged on a semiconductor chips, especially on powersemiconductor chips. In addition, with the inventive method the planarconnection and the particular isolation produces a low-inductionconnection to allow fast and low-loss switching.

Application of the layer of electrically-isolating material produces anelectrical isolation layer. The manufacturing of the isolation layer bythe inventive application of the layer of electrically-isolatingmaterial provides the following advantages:

-   -   use at high temperatures. A layer of electrically-isolating        material is, with a suitable choice of materials, heat-resistant        up to 300° C.    -   Low process costs.    -   High isolation field strengths are possible by using thicker        layers of insulation.    -   Higher throughput. e.g. can be processed in wafers.    -   Homogeneous insulation characteristics since entry of air is        prevented by processing the layer of electrically-isolating        material in a vacuum.    -   The entire chip contact surface can be used so that high        currents can be discharged.    -   The flat contacting allows the chips to be activated        homogeneously.    -   The inductance of the contact with one contact surface is        smaller than with thick wire bonding because of the flat        geometry.    -   The contacting leads to higher reliability for the vibration and        mechanical shock stresses.    -   Higher stability from changes in load of compared to competing        methods because of lower thermo-mechanical voltages.    -   A number of wiring planes are accessible.    -   The planar connection technology described only demands a small        component height. The result is a more compact design.—With        multi-layer connection planes wide-area metallization layers are        implemented for screening. This has a very positive effect in        particular on the EMC (Electromagnetic Compatibility) behavior        of the circuit (noise emissions, noise immunity).

Preferred and advantageous embodiments of the device are produced fromthe preferred embodiments of the method.

BRIEF DESCRIPTION OF THE DRAWINGS

Further features and advantages of the invention are produced from thedescription of exemplary embodiments with reference to the drawing. TheFigures show:

FIG. 1 A method for creating a contacting structure on a powersemiconductor;

FIG. 2 An alternative component with self-supporting contactingstructures, while it is still arranged on a support;

FIG. 3 The component according to FIG. 2 with self-supporting contactingstructures after it has been detached from the support and is solderedinto its intended location, in cross section;

FIG. 4 The component in accordance with FIG. 2 with self-supportingcontacting structures after it is released from the support and solderedinto its intended location, viewed from above;

FIG. 5 A further alternative component with self-supporting contactingstructures while it is still arranged on a carrier;

FIG. 6 The component in accordance with FIG. 5 with self-supportingcontacting structures after it is detached from the support;

FIG. 7 Another alternative component with self-supporting contactingstructures, while it is arranged on a support for fabrication;

FIG. 8 The component in accordance with FIG. 7 with supportingcontacting structures after it is detached from the support.

DETAILED DESCRIPTION OF THE INVENTION

FIG. 1 shows a support 1 made of Teflon on which a component 2 in theform of a semiconductor chip is arranged.

On the upper surface of the semiconductor chip 2 there is a contact witha contact surface 210 it facing away from the semiconductor chip 2.

If for example the semiconductor chip 2 is a transistor, the contactsurface is the contact surface of a collector or drain contact or of anemitter or source contact.

The entire upper surface of the support equipped with a thesemiconductor chip 2 is formed by the surface of the support 1 itselfand by the free surface of the semiconductor chip 2 which is defined bythe upper surface and the side surface of this chip 2.

In step 301 a layer 3 of electrically-isolating plastic material isapplied in a vacuum to the entire surface of the support equipped withthe semiconductor chip 2, so that the layer of electrically-isolatingmaterial provides close coverage of the surface of the support 1equipped with the semiconductor chip 2 with the contact surfaces andadheres to this surface. The layer 3 of electrically-isolating materialin this case follows the surface contours produced by the exposed partsof the surface of the carrier and by the free surface of thesemiconductor chip 2 which is determined by the upper surface and theside surface of this chip 2.

The application of the layer 3 of electrically-isolating material instep 301 is preferably undertaken with one or more of the followingprocesses: Curtain coating, dipping, especially single-side dipping,discharge coating, especially electrostatic discharge coating, printing,especially screen printing, overmolding, dispensing, spin coating.

The layer 3 of electrically-isolating material can also be appliedparticularly well by laminating on a foil, especially a foil made of aPolyimide or epoxy-based plastic material. There can be a subsequenttempering step for better adhesion.

The layer of electrically-isolating material is used as an insulator andas a support or for a further layer 4 comprising electrically-conductivematerial applied thereafter.

Typical thickness of the layer of electrically-isolating material lie inthe range of 25-150 μm, with greater thicknesses being able to beobtained from sequences of layers of thinner sublayers ofelectrically-isolating material. This advantageously allows insulationfield strengths in the range of a few 10 kV/mm to be implemented.

Now in step 302 the contact surface 210 of the component to be contactedis revealed by opening a window 31 in the layer ofelectrically-isolating material.

In addition areas of the support 1 are revealed by opening a relevantwindow 31 in the layer of electrically-isolating material.

The size of the window which is opened for contacting the contactsurface (210) of the component amounts to more than 60% of the size ofthe component. especially to more than 80%

One of the windows 31 in the layer of electrically-isolating material ispreferably opened by laser ablation.

Subsequently, in step 303, the revealed contact surface 210 of thecomponent and each revealed surface on the support 1 is contacted with alayer 4 of electrically-conductive material, preferably metal, over itssurface, in that the revealed contact surface and the revealed areas ofthe support 1 are metalized and thereby planar contacted with the usualmethods.

For example the layer 4 of electrically-conductive material can beapplied over the entire surface of both each contact surface and also tothe upper surface of layer 3 facing away from the support 1 and then forexample structured photo-lithographcally so that each contact surfaceremains fully contacted and conductor tracks 4,6 of insolating materialare produced running over the contact surface of the revealed areas ofthe support 1 and the layer 3.

Preferably the following process steps (semi-additive construction) areperformed to do this:

-   i). Sputtering of a Ti adhesion layer of appr. 100 nm thickness and    of a Cu conducting layer 4 of appr. 200 nm thickness (step 303).-   ii). Photo-lithography using thicker resist layers or photo foils 5    (step 304).-   iii). Electrical strengthening of the revealed areas with an    electrically-conducting layer 6 of greater strength. Layer    thicknesses of up to 500 μm are possible here (step 305).-   iv). Resist coating and differential etching of Cu and Ti as well as    removal of the support (step 306).

Another process that can be used is to apply a mask to the upper surfaceof the layer of electrically-isolating material facing away from thesurface of the substrate 1 which leaves the contact surface as well asareas free for the conductor tracks 4, 6 running over the contactsurface of the revealed areas of the support 1 and the layer 3 ofisolating material, and that then the layer 4 of electrically-conductingmaterial is applied over the entire surface of the mask and the contactsurfaces 210 and 112 as well as the areas free from the mask. Thereafterthe mask is removed along with the layer 4 on it, so that only theplanar-contacted contact surface 210 and the conductor tracks 4,6running over the contact surface of the revealed areas of the support 1and the layer 3 of isolating material on the mask-free areas are left.

In any event a device is provided thereafter consisting of a component 2with a surface on which electrical contact surfaces 210 are arranged, inwhich an insulator in the form of a layer of electrically-isolatingmaterial is applied to a surface which is close to the surface andadheres to the surface and in which the layer of electrically-isolatingmaterial in the contact surface features a window 31 in each case, inwhich this contact surface is free of the layer 3 of electricallyisolating material and is in planar contact with a layer 4 and forexample additionally-with of a layer 6 of electrically-conductingmaterial. Special embodiments of this device are produced by the presentdescription.

The device shown in FIG. 2 is produced using a similar production methodas that shown in FIG. 1. The self-supporting contacting structures 3, 4,6 of the component 2 are fabricated in this case with the followingprocess steps:

-   -   Placing the component 2, which can also exist in the form of a        module, on one or more suitably formed supports 1 coated with        Teflon or similar plastics.    -   Laminating a layer of electrically-isolating material in the        form of a plastic foil in a vacuum under pressure and        temperature over component 2 and support 1.    -   Partial removal of the layer 3 of electrically-isolating        material in the form of a plastic foil inter alia at the contact        surface in the form of connection pads of the component 2        through laser ablation.    -   Application of a layer 4 of electrically-conductive material in        the form of a thin, adhesive metallization, for example a        Titanium adhesive layer, especially through sputtering or vapor        deposition.    -   Application and structuring of a resist, for example through        spin coating, resist deposition, electrophoretic resist        application and subsequent photo lithography or through a        printing process.    -   Electrical strengthening of the revealed metal structures of the        layer 4 of electrically-conductive material with an        electrically-conductive copper layer 6 of greater strength with        an optional subsequent Nickel-Gold covering.    -   Possible covering of the component 2 by a second foil with        subsequent partial laser ablation or by a plastic covering 7 in        the overmold process o r as Globtop.    -   Detaching the component 2 and the metal/plastic contacting        structures 3, 4, 6 produced from the support 1.    -   Possible partial etching away of the adhesion layer 4 from the        metal structures 6, in order to achieve good solderability.    -   Possible formation of the self-supporting metal/plastic        contacting structures 3, 4, 6 produced.

The contacting structure (connection contact structure) are thus createddirectly on the component 2 in this case. This means that the connectionsystem, that is the soldering or wire bonding between the component andthe contact element in the form of a lead frame or spider known from theprior art, is dispensed with. The conductor track 4, 6 created in thiscase for direct electrical connection in the form of a copper foil islow-induction, suitable for high currents and low-cost. Over and abovethis the technology has a very low component height compared to bondconnection, since the bond loop is dispensed with. The technology canalso be used for fabricating connection structures of components in theform of modules containing a number of individual components.

As can be seen from FIG. 2 the component 2 is arranged on a copper layeron a means 8 for dissipating heat (heat sink) while the self-supportingcontacting structures 3, 4,6 are being fabricated. The component 2 andthe means 8 for heat dissipation are in this case surrounded by supports1 which are arranged to the left and to the right of component 2 and themeans 8 for heat dissipation. Instead of two supports 1 twopart-supports of the same support can be employed. In particular, whencontacting structures are to be created which are to make the component2 contactable all the way round, that is on all four sides, thepart-supports can belong to the same support which extends around thecomponent in the form of a support plate, said component being arrangedin a cut-out of the support plate.

In step 306 the component 2 with the self-supporting contact structures3, 4, 6 and the plastic covering 7 is removed from the support 1 and instep up the 307 is installed at its intended location.

To this end, as is shown in cross section in FIG. 3 and in a view fromabove in FIG. 4, the component 2 is glued via its means 8 for heatdissipation using a heat-conducting adhesive 8 or this type of foil, tothe metal housing 9. The electrically-conducting copper layer 6 ofgreater strength is connected to contact surfaces on which it has beenfreed from the layer 4 of electrically-conducting material in the formof an adhesive layer, with conductor tracks 11 of a circuit board,especially a PCB circuit board. This is done using solder connections12. In the exemplary embodiment shown the component 2 is a powertransistor and accordingly conductor track 11 for the collector C, thegate GATE and the emitter E of the transistor are present on the circuitboard 10 with which this is connected.

The exemplary embodiment in accordance with FIG. 5 differs from theembodiment shown in FIG. 2 in that the component 2 is not arranged atthe support 1 but on it. In addition the support 1 is specially embodiedin two respects. On the one hand it has a holder 13 in which thecomponent 2 is securely held during the fabrication process. On theother hand ejectors 14 are arranged in the support which can be movedout of the support, and when the component 2 with the self-supportingcontacting structures 3, 4, 6, that is the possibly stillpartially-present layers of electrically-isolating material and theconductor tracks 4, 6 of the layer 4 of electrically-conductive materialand the electrically-conducting layer 6 of greater strength and with thecover 7 in the form of a Globtop are ejected.

Step 306 comprises in addition to the detachment in the form ofejection, also etching, especially etching away, of the layer 4 ofelectrically-conductive material formed by a titanium adhesion layer atthe points at which the electrically-conducting copper layer 6 ofgreater strength is to be a subsequently soldered.

In FIG. 6 this component 2 with the self-supporting contactingstructures and the cover is depicted in a detailed, handleable state.The conductor tracks 4, 6 of the self-supporting contacting structures3, 4, 6 exhibit through their fabrication process the form of a copperfoil and of therefore especially low-inductance and suitable for highcurrents.

The exemplary embodiment shown in FIGS. 7 and 8 differs from that shownin FIGS. 5 and 6 in that the component 2 in the form of a chip is notarranged in the holder of the support but in a recess of the support 1,of which the depth corresponds approximately to the height of thecomponent and of which the dimensions at right angles to its depthapproximately correspond to the dimensions of the component at rightangles to its height. In this way the contacting structure 3, 4, 6fabricated on the component 2 is not brought down to the side of thecomponent 2 located at the bottom during the fabrication but remains ataround the same level or above the level of the upper side of thecomponent 2 during fabrication. The advantage of this is that theextra-strength electrically-conducting layer 6 to be contacted does notfirst have to be-freed from the adhesive layer or the foil since itsblank surfaces pointing upwards during fabrication can be directly usedfor soldering, in that the component 2 with its side which is at the topduring fabrication pointing to a substrate can be assigned to thelatter. To this end, as also applies in the other exemplary embodiments,the contact surface 610, that is the solderable leads, of theextra-strength electrically-conductive layer 6 are correctly placed onand soldered to the conductor track 4, 6 with methods known from SMDtechnology. Heat and pressure type soldering can however also be used onthe equipped PCB circuit board, as with TAB.

1. A method of manufacturing an electrical component having a contactstructure, the component comprising: at least one electrical contactsurface and multiple side surfaces generally oriented at right angles tothe contact surface and of dimensions corresponding to a height of thecomponent; and at least one contacting structure for electricallycontacting the contact surface, the method comprising: providing asupport having a first surface along which a recess is formed therein,the recess having a depth approximately corresponding to the height ofthe component; positioning the component in the recess of the supportwith the sides extending into the recess so that the contact surface isat a level at or below that of the first surface; attaching at least onecontiguous isolating layer of electrically isolating material to thecomponent and to the support such that the contact surface remains atleast partly free of isolating material, the isolating layer extendingdirectly from the contact surface to the first surface instead ofextending in a path along the contact surface and then along one of theside surfaces in order to extend along the first surface; manufacturingthe contacting structure by applying a conducting layer of electricallyconductive material onto the isolating layer and the contact surfacesuch that the conducting layer does not extend along the sides of thecomponent; and detaching the contacting structure, including theisolating layer, from the support, wherein: (i) applying the conductinglayer includes arranging at least two component part conductive layershaving different electrically conductive materials one above the other,and (ii) after detaching the contacting structure the conducting layerextends outward from the contacting surface and beyond at least one ofthe sides.
 2. The method according to claim 1, wherein arranging atleast one of the part conducting layers includes electroplatingelectrically conductive material.
 3. The method according to claim 2,wherein an upper part conducting layer is arranged by electroplating. 4.The method according to claim 1, wherein attaching the isolating layerincludes applying the electrically isolating material to the componentand removing the electrically isolating material such that the contactsurface is set free.
 5. The method according to claim 1, wherein thesupport has at least on part of its surface a lower surface adhesionthan the component.
 6. The method according to claim 5, wherein thesupport is Teflon™ coated or made from Teflon™ such that the lowersurface adhesion results.
 7. The method according to claim 1, whereinthe support comprises a fixture for the component.
 8. The methodaccording to claim 1, wherein the support comprises an ejector fordetaching the isolating layer from the support.
 9. The method accordingto claim 1, wherein attaching the isolating layer results in a freeconduct surface comprising at least 60% of an extent of the component.10. The method according to claim 9, wherein the free conduct surfacecomprises at least 80% of the extent of the component.
 11. The methodaccording to claim 9, wherein the free conduct surface comprises notmore than 95% of the extent of the component.
 12. The method accordingto claim 1, wherein attaching the isolating layer includes applying theelectrically isolating material by an applying method chosen from thegroup consisting of curtain coating, dipping, discharge coating,printing, overmolding, dispensing, spin coating, and laminating a foil.13. The method according to claim 12, wherein attaching the isolatinglayer includes laminating a foil and the foil is based on a plasticmaterial chosen from the group consisting of Polyimide, Polyethylene,Polyphenol, Polyether Etherketone, and epoxy.
 14. The method accordingto claim 12, wherein attaching the isolating layer includes laminating afoil, and after laminating the foil, adding a temper step.
 15. Themethod according to claim 1, wherein the isolating layer has a thicknessof 25 to 150 μm.
 16. The method according to claim 1, wherein thecomponent is a power semiconductor.
 17. The method according to claim 1,wherein the component has a thickness of at least 70μm.
 18. The methodaccording to claim 1, wherein the thickness of the component is at least100 μm.
 19. The method according to claim 1, wherein the component formsa surface contour, and the isolating layer is applied to the componentsuch that the isolating layer follows the surface contour.
 20. Themethod according to claim 4, wherein removing the electrically isolatingmaterial includes laser ablation.
 21. The method according to claim 4,wherein the electrically isolating material is photosensitive, andremoving the electrically isolating material includes aphotolithographic process.